SEMICONDUCTOR
TECHNICAL DATA
DWC301~311 DWC317, 322, 323
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Trans...
SEMICONDUCTOR
TECHNICAL DATA
DWC301~311 DWC317, 322, 323
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the DWC3xx series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design Reduces Board Space Reduces Component Count We declare that the material of product compliance with RoHS requirements.
6 5
4
1 2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.)
°C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic (Both Junctions Heated)
Symbol
Max
Total Device Dissipation T A = 25°C Derate above 25°...