MPS8050
N
MPS8050
Discrete POWER & Signal Technologies
C BE
TO-92
NPN General Purpose Amplifier
This device is desi...
MPS8050
N
MPS8050
Discrete POWER & Signal Technologies
C BE
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
1.0
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
MPS8050 625 5.0 83.3
200
Units
V V V A °C
Units
mW mW/°C °C/W °C/W
MPS8050
Electrical Characteristics
Symbol
Parameter
NPN General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES
Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Curre...