EB203D

SY semiconductors Shenzhen SY Semiconductors Co.，LTD. EB SERIES TRANSISTORS EB203D ●FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA ●APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST ●Absolute Maximum Ratings (Tc=25℃) PARAMETER Collector–Base Voltage Collector–Emitter Voltage Emitter –Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 600 400 9 1.2 13 150 -65-150 UNIT V V V A W ℃ ℃ TO-92 NPN ● Electronic Characteristics (Tc=25℃) CHARACTERISTICS SYMBOL Collector–Base Cutoff Current ICBO Collector–Emitter Cutoff Current ICEO Collector–Emitter Voltage VCEO Emitter –Base Voltage VEBO Collector–Emitter Saturation Vcesat Voltage Base–Emitter Saturation Voltage Vbesat DC Current Gain HFE Storage Time Falling Time Diode Forward Voltage Ts Tf Vf TEST CONDITION VCB=600v VCE=400v IC=10mA IB=0 IE=1mA IC=0 IC=0.5A IB=0.1A IC=1A IB=0.5A IC=0.5A IB=0.1A VCE=5v IC=1mA VCE=10v IC=0.1A VCE=5v IC=1.2A VCC=5V IC=0.25A IF=1.0A MIN 400 9 7 10 5 1.5 MAX 100 250 0.5 0.6 1.2 UNIT µA µA V V V V V 40 3.5 µS 0.8 µS 2.0 V ●CLASSIFICATION OF HFE AND TS HFE 10-15 15-20 TS 1.5-2.0 2.0-2.5 20-25 2.5-3.0 25-30 3.0-3.5 SY semiconductors 1/3 SY semiconductors Shenzhen SY Semiconductors Co.，LTD. EB SERIES TRANSISTORS EB203D SY semiconductors 2/3 SY semiconductors Shenzhen SY Semiconductors Co.，LTD. EB SERIES TRANSISTORS EB203D SYMBOL A b c D d E e e1 L...