IRFR420

Data Sheet IRFR420, IRFU420 January 2002 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. Ordering Information PART NUMBER PACKAGE BRAND IRFR420 TO-252AA IFR420 IRFU420 TO-251AA IFU420 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in the tape and reel, i.e., IRFR420T. Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) Features 2.5A, 500V rDS(ON) = 3.000Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-252AA GATE DRAIN (FLANGE) DRAIN SOURCE ©2002 Fairchild Semiconductor Corporation IRFR420, IRFU420 Rev. B IRFR420, IRFU420 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR420, IRFU420 UN...