Document
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
IRFS350A
BVDSS = 400 V RDS(on) = 0.3Ω ID = 11.5 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Value 400 11.5 7.3 68 ±30 1134 11.5 9.2 4.0 92 0.74
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W/°C
°C
Thermal Resistance
Symbol
RθJC RθJA
Characteristic Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 1.35 40
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFS350A
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
400 -- -- V -- 0.46 -- V/°C 2.0 -- 4.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 0.3 Ω
-- 9.75 --- 2140 2780 -- 305 350 pF -- 134 155 -- 20 50 -- 22 55
ns -- 100 210 -- 32 75 -- 101 131 -- 14 -- nC -- 51.5 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125°C
VGS=10V,ID=5.75A (4)
VDS=50V,ID=5.75A (4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=200V,ID=17A, RG=6.2Ω
See Fig 13
(4) (5)
VDS=320V,VGS=10V, ID=17A See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 11.5
Integral reverse pn-diode
A
-- 68
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=11.5A,VGS=0V
-- 385 -- ns TJ=25°C,IF=17A
-- 4.85 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=15mH, IAS=11.5A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 17A, di/dt ≤ 250A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
Capacitance [pF]
RDS(on) , [ Ω] Drain-Source On-Resistance
ID , Drain Current [A]
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Fig 1. Output Characteristics
VGS Top : 15V
10 V 8.0 V 7.0 V
101 6.0 V
5.5 V 5.0 V Bottom : 4.5V
100 10-110-1
@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.60
0.45 VGS =10 V
0.30 0.15 0.00
0
VGS =20 V
@ Note :TJ =25 oC 10 20 30 40 50 60 70
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
4000 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd
3000
C iss
2000
C oss 1000
C rss
@ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 100 101
VDS , Drain-Source Voltage [V]
IDR , Reverse Drain Current [A]
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
IRFS350A
Fig 2. Transfer Characteristics
101
150 oC
100 25 oC
10-1 2
- 55 oC
@ Notes : 1. VGS = 0 V 2. VDS = 50 V 3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1 0.2
150 oC 25 oC
@Notes : 1. VGS =0 V 2. 250µsPulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 80 V 10
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 17.0 A 0
0 20 40 60 80 100 120
QG , Total Gate Charge [nC]
IRFS350A
1&+$11(/ 32:(5 026)(7
BVDSS , (Normalized) Drain-Source Breakdown Voltage
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA
0.8 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0 @ Notes :
0.5 1. VGS = 10 V 2. ID = 8.5 A
0.0 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
ID , Drain Current [A]
102 101 100 10-1100
Fig 9. Max. Safe Operating Area
Operation in This Area is Limited by R DS(on)
100 µ.