Document
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.308Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
IRFS450
BVDSS = 500 V RDS(on) = 0.4Ω ID = 9.6 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Value 500 9.6 6.1 56 ±30 1024 9.6 9.6 3.5 96 0.77
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W/°C
°C
Thermal Resistance
Symbol
RθJC RθJA
Characteristic Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 1.3 40
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFS450
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
500 -- -- V -- 0.68 -- V/°C 2.0 -- 4.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 0.4 Ω
-- 8.96 --- 2500 3250 -- 295 340 pF -- 130 150 -- 23 55 -- 26 60
ns -- 125 260 -- 37 85 -- 121 157 -- 16.2 -- nC -- 61 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=500V VDS=400V,TC=125°C
VGS=10V,ID=4.8A
(4)
VDS=50V,ID=4.8A
(4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=250V,ID=14A, RG=6.2Ω
See Fig 13
(4) (5)
VDS=400V,VGS=10V, ID=14A See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 9.6
Integral reverse pn-diode
A
-- 56
in the MOSFET
(4) -- -- 1.4 V TJ=25°C,IS=9.6A,VGS=0V
-- 437 -- ns TJ=25°C,IF=14A
-- 5.5 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=20mH, IAS=9.6A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 14A, di/dt ≤ 230A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
Capacitance [pF]
RDS(on) , [ Ω] Drain-Source On-Resistance
ID , Drain Current [A]
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Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
101
7.0 V 6.0 V
5.5 V
5.0 V
Bottom : 4.5V
100 10-110-1
@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1.0
0.8
VGS =10 V 0.6
0.4
VGS =20 V 0.2
@ Note :TJ =25 oC 0.0
0 10 20 30 40 50 60
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
4000 3000 C iss
Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd
2000
1000 C oss C rss
@ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 100 101
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
IDR , Reverse Drain Current [A]
ID , Drain Current [A]
IRFS450
Fig 2. Transfer Characteristics
101
150 oC
100 25 oC
10-1 2
- 55 oC
@ Notes : 1. VGS = 0 V 2. VDS = 50 V 3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC 25 oC
@Notes : 1. VGS =0 V 2. 250µsPulse Test
10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
2.2
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 100 V VDS = 250 V
VDS = 400 V
5
@ Notes : ID = 14.0 A 0
0 20 40 60 80 100 120 140
QG , Total Gate Charge [nC]
IRFS450
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BVDSS , (Normalized) Drain-Source Breakdown Voltage
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA
0.8 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0 @ Notes :
0.5 1. VGS = 10 V 2. ID = 7 A
0.0 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
ID , Drain Current [A]
Fig 9. Max. Safe Operating Area
Operation in This Area 102 is Limited by R DS(on)
101 100 10-110.