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IRFS710A Dataheets PDF



Part Number IRFS710A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRFS710A DatasheetIRFS710A Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Low RDS(ON) : 2.815 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single .

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Low RDS(ON) : 2.815 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O2 O1 O1 O3 Total Power Dissipation (TC=25 ΟC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8”from case for 5-seconds IRFS710A BVDSS = 400 V RDS(on) = 3.6 Ω ID = 1.6 A TO-220F 2 3 1.Gate 2. Drain 3. Source Value 400 1.6 1 6 +_ 30 117 1.6 2.3 4.0 23 0.19 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/ ΟC ΟC Thermal Resistance Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ. --- Max. 5.37 62.5 Units ΟC /W Rev. B IRFS710A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 ΟC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current 400 -- -- V -- 0.53 -- V/ ΟC 2.0 -- 4.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA VGS=0V,ID=250 µA ID=250 µA See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125 ΟC Static Drain-Source On-State Resistance -- -- 3.6 Ω VGS=10V,ID=0.8A O4 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance -- 1.14 -- Ω VDS=50V,ID=0.8A O4 -- 215 280 -- 35 42 VGS=0V,VDS=25V,f =1MHz pF See Fig 5 -- 13 17 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time -- 11 30 -- 15 40 VDD=200V,ID=2A, -- 38 90 ns RG=24 Ω -- 13 35 See Fig 13 O4 O5 Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge -- 10 14 VDS=320V,VGS=10V, -- 1.8 -- nC ID=2A -- 5.4 -- See Fig 6 & Fig 12 O4 O5 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge O1 O4 Min. Typ. Max. Units Test Condition -- -- 1.6 Integral reverse pn-diode A -- -- 6 in the MOSFET -- -- 1.5 V TJ=25ΟC,IS=1.6A,VGS=0V -- 224 -- ns TJ=25ΟC,IF=2A -- 0.87 -- µC diF/dt=100A/ µs Notes ; O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O2 L=80mH, IAS=1.6A, VDD=50V, RG=27Ω , Starting TJ =25oC O3 ISD <_ 2A, di/dt <_ 80A/µs, VDD<_ BVDSS , Starting TJ =25 oC O4 Pulse Test : Pulse W.


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