Document
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Low RDS(ON) : 2.815 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
O2 O1 O1 O3
Total Power Dissipation (TC=25 ΟC ) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
IRFS710A
BVDSS = 400 V RDS(on) = 3.6 Ω ID = 1.6 A
TO-220F
2 3
1.Gate 2. Drain 3. Source
Value 400 1.6 1 6 +_ 30 117 1.6 2.3 4.0 23 0.19
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC R θJA
Characteristic Junction-to-Case Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ. ---
Max. 5.37 62.5
Units ΟC /W
Rev. B
IRFS710A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 ΟC unless otherwise specified)
Symbol BVDSS
∆BV/ ∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
400 -- -- V -- 0.53 -- V/ ΟC 2.0 -- 4.0 V
-- -- 100 nA -- -- -100
-- -- 10 -- -- 100 µA
VGS=0V,ID=250 µA ID=250 µA See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125 ΟC
Static Drain-Source On-State Resistance
-- -- 3.6 Ω VGS=10V,ID=0.8A
O4
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- 1.14 -- Ω VDS=50V,ID=0.8A
O4
-- 215 280
--
35
42
VGS=0V,VDS=25V,f =1MHz pF
See Fig 5
-- 13 17
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
-- 11 30
-- 15 40
VDD=200V,ID=2A,
-- 38 90 ns RG=24 Ω
-- 13 35
See Fig 13 O4 O5
Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge
-- 10 14
VDS=320V,VGS=10V,
-- 1.8 -- nC ID=2A
-- 5.4 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
O1 O4
Min. Typ. Max. Units
Test Condition
-- -- 1.6
Integral reverse pn-diode
A
-- -- 6
in the MOSFET
-- -- 1.5 V TJ=25ΟC,IS=1.6A,VGS=0V -- 224 -- ns TJ=25ΟC,IF=2A -- 0.87 -- µC diF/dt=100A/ µs
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O2 L=80mH, IAS=1.6A, VDD=50V, RG=27Ω , Starting TJ =25oC O3 ISD <_ 2A, di/dt <_ 80A/µs, VDD<_ BVDSS , Starting TJ =25 oC O4 Pulse Test : Pulse W.