IRFSZ14A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡É Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy O1 O1 Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC ) Linear Derating Factor O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds IRFSZ14A BVDSS = 60 V RDS(on) = 0.14 Ω ID = 8 A TO-220F 2 3 1.Gate 2. Drain 3. Source Value 60 8 5.6 40 +_ 20 55 8 1.9 5.5 19 0.13 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W/ oC oC Thermal Resistance Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ. --- Max. 7.89 62.5 Units oC /W Rev. B IRFSZ14A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage T...