Document
$GYDQFHG 3RZHU 026)(7
IRFW730S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.765Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 400 V RDS(on) = 1.0Ω ID = 5.5 A
D2-PAK I2-PAK
2
1 3
1 2 3
1. Gate 2. Drain 3. Source
Value 400 5.5 3.5 22 ±30 346 5.5 7.3 4.0 3.1 73 0.58
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC RθJA RθJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max. 1.71 40 62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFW730S
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Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
400 -- -- V -- 0.52 -- V/°C 2.0 -- 4.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 1.0 Ω
-- 4.03 --- 675 880 -- 95 110 pF -- 43 52 -- 15 40 -- 18 50
ns -- 62 140 -- 22 60 -- 32 42 -- 4.6 -- nC -- 16.6 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125°C
VGS=10V,ID=2.75A (4)
VDS=50V,ID=2.75A (4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=200V,ID=5.5A, RG=12Ω
See Fig 13
(4) (5)
VDS=320V,VGS=10V, ID=5.5A See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 5.5
Integral reverse pn-diode
A
-- 22
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=5.5A,VGS=0V
-- 259 -- ns TJ=25°C,IF=5.5A
-- 1.81 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=20mH, IAS=5.5A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 5.5A, di/dt ≤ 140A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
Capacitance [pF]
RDS(on) , [ Ω] Drain-Source On-Resistance
ID , Drain Current [A]
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Fig 1. Output Characteristics
VGS
101 Top :
15 V 10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
100
10-1 10-1
@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.5
2.0 VGS =10 V
1.5
1.0 VGS =20 V
0.5
@ Note :TJ =25 oC 0.0
0 5 10 15 20 25
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1000 800 C iss
Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd
600
400 C oss
200 C rss
@ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 100 101
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
IDR , Reverse Drain Current [A]
ID , Drain Current [A]
IRFW730S
Fig 2. Transfer Characteristics
101
150 oC
100 25 oC
10-1 2
- 55 oC
@ Notes : 1. VGS = 0 V 2. VDS = 50 V 3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC 10-1
0.4
25 oC
@Notes : 1. VGS =0 V 2. 250 µsPulse Test
0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 80 V VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 5.5 A 0
0 5 10 15 20 25 30 35
QG , Total Gate Charge [nC]
BVDSS , (Normalized) Drain-Source Breakdown Voltage
IRFW730S
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Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA
0.8 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0 @ Notes :
0.5 1. VGS = 10 V 2. ID = 2.75 A
0.0 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction .