IRFWZ24

Advanced Power MOSFET IRFWZ24 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 60 V RDS(on) = 0.07Ω ID = 17 A D2-PAK I2-PAK 2 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 60 17 12 68 ±20 149 17 4.4 5.5 3.8 44 0.29 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W W/°C °C Thermal Resistance Symbol Characteristic Typ. RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient * Junction-to-Ambient ---- * When mounted on the minimum pad size recommended (PCB Mount). Max. 3.43 40 62.5 Units °C/W Rev. B © 1999 Fairchild Semiconductor Corporation IRFWZ24 N-CHANNEL POWER MOSFET Electrical Characteristics(TC=25°C unless otherwise specified) Symbol Characteristic Min. Typ...