DatasheetsPDF.com

IRFWZ34

Power MOSFET

Description

$GYDQFHG 3RZHU 026)(7 IRFWZ34 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt ...

Fairchild Semiconductor

Download IRFWZ34 Datasheet

Similar Datasheet

IRFWZ14 Power MOSFET - Fairchild Semiconductor
IRFWZ14A Power MOSFET - Fairchild Semiconductor
IRFWZ24 Power MOSFET - Fairchild Semiconductor
IRFWZ24A Power MOSFET - Samsung
IRFWZ34 Power MOSFET - Fairchild Semiconductor
IRFWZ34A Power MOSFET - Fairchild Semiconductor
IRFWZ44 Power MOSFET - Fairchild Semiconductor
IRFWZ44A Power MOSFET - Samsung

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)