Document
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.101Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC RθCS RθJA
Characteristic Junction-to-Case
Case-to-Sink Junction-to-Ambient
IRL530
BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Value 100 14 9.9 49 ±20 261 14 6.2 6.5 62 0.41
- 55 to +175
300
Units V
A
A V mJ A mJ V/ns W W/°C
°C
Typ. -0.5 --
Max. 2.41
-62.5
Units °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRL530
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge
100 -- -- V -- 0.1 -- V/°C 1.0 -- 2.0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA
-- -- 0.12 Ω
-- 10.2 --- 580 755 -- 140 175 pF -- 60 75 -- 10 30 -- 11 30
ns -- 29 70 -- 15 40 -- 16.9 24 -- 2.7 -- nC -- 9.7 --
Ω
VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150°C
VGS=5V,ID=7A
(4)
VDS=40V,ID=7A (4)
VGS=0V,VDS=25V,f =1MHz See Fig 5
VDD=50V,ID=14A, RG=6Ω
See Fig 13
(4) (5)
VDS=80V,VGS=5V, ID=14A See Fig 6 & Fig 12
(4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-(1) --
-- 14 -- 49
Integral reverse pn-diode A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=14A,VGS=0V
-- 109 -- ns TJ=25°C,IF=14A
-- 0.41 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=2mH, IAS=14A, VDD=25V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 14A, di/dt ≤ 350A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
2
Capacitance [pF]
RDS(on) , [ Ω ] Drain-Source On-Resistance
ID , Drain Current [A]
1&+$11(/ 32:(5 026)(7
Fig 1. Output Characteristics
102
Top :
VGS 7.0V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
101 Bottom : 3.0V
100 10-1
@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
VGS = 5 V 0.15
0.10 0.05 0.00
0
VGS = 10 V
@ Note : TJ = 25 oC
15 30 45
ID , Drain Current [A]
60
Fig 5. Capacitance vs. Drain-Source Voltage
1000 800 C iss
Ciss= Cgs+ Cgd (Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd
600 C oss
400 C rss
200
@ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 100 101
VDS , Drain-Source Voltage [V]
IDR , Reverse Drain Current [A]
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
IRL530
Fig 2. Transfer Characteristics
101
175 oC
100 10-1
0
25 oC
- 55 oC
@ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test
2468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC 25 oC
@ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test
10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
2.2
Fig 6. Gate Charge vs. Gate-Source Voltage
6 VDS = 20 V
VDS = 50 V
VDS = 80 V 4
2
@ Notes : ID = 14 A 0
0 3 6 9 12 15 18
QG , Total Gate Charge [nC]
BV , (Normalized)
DSS
Drain-Source Breakdown Voltage
IRL530
1&+$11(/ 32:(5 026)(7
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. V = 0 V
GS
2.
I
D
= 250
µA
0.8 -75 -50 -25 0 25 50 75 100 125 150 175 200
T , Junction Temperature [oC]
J
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0 @ Notes :
0.5 1. VGS = 5 V 2. ID = 7 A
0.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
Operation in This Area 102 is Limited by R
DS(on)
100 µs 1 ms 101 10 ms.