IRFS7530-7PPbF

Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches StrongIRFET™ IRFS7530-7PPbF HEXFET® Power MOSFET  D VDSS 60V RDS(on) typ. 1.15m G max 1.4m ID (Silicon Limited) 338A S ID (Package Limited) 240A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate D Drain S Source Base Part Number IRFS7530-7PPbF Package Type D2Pak-7PIN Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Complete Part Number IRFS7530-7PPbF IRFS7530TRL7PP RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 6 ID = 100A 5 4 3 TJ = 125°C 2 1 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 350 300 250 200 150 100 50 0 25 Limited By Package 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015   IRFS7530-7PPbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon L...