IRLI640A

$GYDQFHG 3RZHU 026)(7 IRLW/I640A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 200 V RDS(on) = 0.18Ω ID = 18 A D2-PAK I2-PAK 2 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 200 18 11.4 63 ±20 64 18 11 5 3.1 110 0.88 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W W/°C °C Thermal Resistance Symbol Characteristic Typ. RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient * Junction-to-Ambient ---- * When mounted on the minimum pad size recommended (PCB Mount). Max. 1.14 40 62.5 Units °C/W Rev. B ©1999 Fairchild Semiconductor Corporation 1 IRLW/I640A 1&+$11(/ 32:(5 026)(7 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ ...