Power MOSFET
IRF840A, SiHF840A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Power MOSFET
IRF840A, SiHF840A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
38 9.0 18 Single
0.85
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES
Low Gate Charge Qg Results in Simple Drive Requirement
Available
Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
Fully Characterized Capacitance and Avalanche Voltage and Current
Effective Coss Specified Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power Switching
TYPICAL SMPS TOPOLOGIES Two
Transistor Forward Half Bridge Full Bridge
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
TO-220AB IRF840APbF SiHF840A-E3 IRF840A SiHF840A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, ...