IRFW620A

Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25oC ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = 200 V RDS(on) = 0.8 Ω ID = 5 A D2-PAK I2-PAK 2 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 200 5 3.2 18 +_ 30 67 5 4.7 5.0 3.1 47 0.38 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W W/oC oC Thermal Resistance Symbol Characteristic Typ. RθJC Junction-to-Case -- RθJA Junction-to-Ambient * -- RθJA Junction-to-Ambient -- * When mounted on the minimum pad size recommended (PCB Mount). Max. 2.65 40 62.5 Units oC/W Rev. B ©1999 Fairchild Semiconductor Corporation IRFW/I620A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss ...