IRFIZ24A

Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25oC ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = 60 V RDS(on) = 0.07 Ω ID = 17 A D2-PAK I2-PAK 2 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 60 17 12 68 +_ 20 149 17 4.4 5.5 3.8 44 0.29 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W W/oC oC Thermal Resistance Symbol Characteristic Typ. R θ JC R θ JA R θ JA Junction-to-Case Junction-to-Ambient * Junction-to-Ambient ---- * When mounted on the minimum pad size recommended (PCB Mount). Max. 3.43 40 62.5 Units oC /W IRFW/IZ24A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) t...