HZS9

HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z (Previous: ADE-208-120B) Rev.3.00 Mar.11.2004 Features Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS Series Pin Arrangement Mark Type No. Package Code MHD B 7 12 2 Type No. Cathode band 1. Cathode 2. Anode Rev.3.00, Mar.11.2004, page 1 of 6 HZS Series Absolute Maximum Ratings Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 −55 to +175 (Ta = 25°C) Unit mW °C °C Electrical Characteristics Zener Voltage Type Grade VZ (V)*1 Min HZS2 A1 1.6 A2 1.7 A3 1.8 B1 1.9 B2 2.0 B3 2.1 C1 2.2 C2 2.3 C3 2.4 HZS3 A1 2.5 A2 2.6 A3 2.7 B1 2.8 B2 2.9 B3 3.0 C1 3.1 C2 3.2 C3 3.3 HZS4 A1 3.4 A2 3.5 A3 3.6 B1 3.7 B2 3.8 B3 3.9 C1 4.0 C2 4.1 C3 4.2 HZS5 A1 4.3 A2 4.4 A3 4.5 B1 4.6 B2 4.7 B3 4.8 Note: 1. Tested with DC. Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 Test Condition IZ (mA) 5 Reverse Current IR (µA) Test Condition Max VR (V) 25 0.5 (Ta = 25°C) Dynamic Resistance rd (Ω) Test Condition Max IZ (mA) 100 5 5 5 0.5 100 5 5 5 0.5 100 5 5 5...