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HZS30 Dataheets PDF



Part Number HZS30
Manufacturers Renesas
Logo Renesas
Description Silicon Epitaxial Planar Zener Diode
Datasheet HZS30 DatasheetHZS30 Datasheet (PDF)

HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z (Previous: ADE-208-120B) Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS Series Pin Arrangement Mark Type No. Package .

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HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z (Previous: ADE-208-120B) Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS Series Pin Arrangement Mark Type No. Package Code MHD B 7 12 2 Type No. Cathode band 1. Cathode 2. Anode Rev.3.00, Mar.11.2004, page 1 of 6 HZS Series Absolute Maximum Ratings Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 −55 to +175 (Ta = 25°C) Unit mW °C °C Electrical Characteristics Zener Voltage Type Grade VZ (V)*1 Min HZS2 A1 1.6 A2 1.7 A3 1.8 B1 1.9 B2 2.0 B3 2.1 C1 2.2 C2 2.3 C3 2.4 HZS3 A1 2.5 A2 2.6 A3 2.7 B1 2.8 B2 2.9 B3 3.0 C1 3.1 C2 3.2 C3 3.3 HZS4 A1 3.4 A2 3.5 A3 3.6 B1 3.7 B2 3.8 B3 3.9 C1 4.0 C2 4.1 C3 4.2 HZS5 A1 4.3 A2 4.4 A3 4.5 B1 4.6 B2 4.7 B3 4.8 Note: 1. Tested with DC. Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 Test Condition IZ (mA) 5 Reverse Current IR (µA) Test Condition Max VR (V) 25 0.5 (Ta = 25°C) Dynamic Resistance rd (Ω) Test Condition Max IZ (mA) 100 5 5 5 0.5 100 5 5 5 0.5 100 5 5 5 1.0 100 5 5 5 1.5 100 5 Rev.3.00, Mar.11.2004, page 2 of 6 HZS Series Zener Voltage Type Grade VZ (V)*1 Min HZS5 C1 4.9 C2 5.0 C3 5.1 HZS6 A1 5.2 A2 5.3 A3 5.4 B1 5.5 B2 5.6 B3 5.7 C1 5.8 C2 6.0 C3 6.1 HZS7 A1 6.3 A2 6.4 A3 6.6 B1 6.7 B2 6.9 B3 7.0 C1 7.2 C2 7.3 C3 7.5 HZS9 A1 7.7 A2 7.9 A3 8.1 B1 8.3 B2 8.5 B3 8.7 C1 8.9 C2 9.1 C3 9.3 HZS11 A1 9.5 A2 9.7 A3 9.9 B1 10.2 B2 10.4 B3 10.7 C1 10.9 C2 11.1 C3 11.4 HZS12 A1 11.6 A2 11.9 A3 12.2 B1 12.4 B2 12.6 B3 12.9 Note: 1. Tested with DC. Max 5.1 5.2 5.3 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 Test Condition IZ (mA) 5 Reverse Current IR (µA) Test Condition Max VR (V) 5 1.5 (Ta = 25°C) Dynamic Resistance rd (Ω) Test Condition Max IZ (mA) 100 5 5 5 2.0 40 5 5 1 3.5 15 5 5 1 5.0 20 5 5 1 7.5 25 5 5 1 9.5 35 5 Rev.3.00, Mar.11.2004, page 3 of 6 HZS Series Zener Voltage Reverse Current Type HZS12 Grade C1 VZ (V)*1 Min 13.2 Max 13.7 Test Condition IZ (mA) 5 IR (µA) Max 1 Test Condition VR (V) 9.5 C2 13.5 14.0 C3 13.8 14.3 HZS15 1 14.1 14.7 5 1 11.0 2 14.5 15.1 3 14.9 15.5 HZS16 1 15.3 15.9 5 1 12.0 2 15.7 16.5 3 16.3 17.1 HZS18 1 16.9 17.7 5 1 13.0 2 17.5 18.3 3 18.1 19.0 HZS20 1 18.8 19.7 2 1 15.0 2 19.5 20.4 3 20.2 21.1 HZS22 1 20.9 21.9 2 1 17.0 2 21.6 22.6 3 22.3 23.3 HZS24 1 22.9 24.0 2 1 19.0 2 23.6 24.7 3 24.3 25.5 HZS27 1 25.2 26.6 2 1 21.0 2 26.2 27.6 3 27.2 28.6 HZS30 1 28.2 29.6 2 1 23.0 2 29.2 30.6 3 30.2 31.6 HZS33 1 31.2 32.6 2 1 25.0 2 32.2 33.6 3 33.2 34.6 HZS36 1 34.2 35.7 2 1 27.0 2 35.3 36.8 3 36.4 38.0 Notes: 1. Tested with DC. 2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3. (Ta = 25°C) Dynamic Resistance rd (Ω) Test Condition Max IZ (mA) 35 5 40 5 45 5 55 5 60 2 65 2 70 2 80 2 100 2 120 2 140 2 Rev.3.00, Mar.11.2004, page 4 of 6 Zener Current IZ (A) HZS2B2 HZS4B2 HZS6B2 HZS9B2 HZS12B2 HZS16-2 HZS20-2 HZS24-2 HZS30-2 HZS36-2 HZS Series Main Characteristic 10–2 10–3 10–4 10–5 10–6 10–7 10–8 0 5 10 15 20 25 30 35 40 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage Zener Voltage Temperature Coefficient γZ (%/°C) Zener Voltage Temperature Coefficient γZ (mV/°C) Power Dissipation Pd (mW) 0.10 0.08 %/ °C 50 40 0.06 30 0.04 0.02 mV/°C 20 10 00 −0.02 −10 −0.04 −20 −0.06 −30 −0.08 −40 −0.10 −50 0 5 10 15 20 25 30 35 40 Zener Voltage VZ (V) Fig.2 Temperature Coefficient vs. Zener voltage 500 400 300 l 2.5 mm 3 mm Printed circuit board 100×180 ×1.6t mm Material: paper phenol l = 5 mm 200 l = 10 mm (Publication value) 100 0 0 50 100 150 200 Ambient Temperature Ta (°C) Fig.3 Power Dissipation vs. Ambient Temperature Rev.3.00, Mar.11.2004, page 5 of 6 HZS Series Package Dimensions 26.0 Min 2.4 Max 26.0 Min As of January, 2003 Unit: mm φ 0.4 φ 2.0 Package Code JEDEC JEITA Mass (reference value) MHD Conforms — 0.084 g Rev.3.00, Mar.11.2004, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to .


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