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FML32S Dataheets PDF



Part Number FML32S
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 200Volt Insulated Fast Recovery Diode
Datasheet FML32S DatasheetFML32S Datasheet (PDF)

FML32S ® FML32S Pb Free Plating Product Pb 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current TO-3PF/TO-3PML Internal Configuration Base Backside — Anode C.

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FML32S ® FML32S Pb Free Plating Product Pb 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current TO-3PF/TO-3PML Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION FML32S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine. ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VR VRRM IF(AV) IF(RMS) IFSM PD TJ TSTG Torque Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage Average Forward Current RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink TC=110°C, Per Diode TC=110°C, Per Package TC=110°C, Per Diode TJ=45°C,t=10ms, 50Hz, Sine Recommended(M3) 210 10 20 14 100 83 -55 to +150 -55 to +150 1.1 Rth(J-C) Weight Junction-to-Case Thermal Resistance, Per Diode 1.5 5.2 Unit V A W °C °C N•m °C /W g ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. Unit IRM Maximum Reverse Leakage Current VR =220V VR =220V, TJ = 125°C 10 μA 10 mA VF Forward Voltage IF=10A IF=10A,TJ=125°C trr Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V) 0.9 1.1 V 0.8 0.95 17 ns trr Reverse Recovery Time IF =10A,VR =100V, 32 ns IRRM Maximum Reverse Recovery Current diF/dt = -200A/μs 2.1 A trr Reverse Recovery Time IF = 10A,VR =100V, 45 ns IRRM Maximum Reverse Recovery Current diF/dt = -200A/μs ,TJ=125°C 5 A Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/3 http://www.thinkisemi.com/ FML32S ® IRRM(A) IF(A) 30 25 25°C 125°C 20 15 10 5 Per Diode 0 0.3 0.6 0.9 1.2 1.5 VF(V) Figure 1. Forward Voltage Drop vs Forward Current 15 25°C 12 125°C 9 6 3 Per Diode 0 100 200 300 400 500 diF/dt(A/μs) Figure 3. Reverse Recovery Current vs diF/dt 12 DC 8 QRRM(nc) trr (ns) 80 25°C 60 125°C 40 20 0 100 Per Diode 200 300 400 diF/dt(A/μs) 500 Figure 2. Reverse Recovery Time vs diF/dt 250 200 25°C 125°C 150 100 50 Per Diode 0 100 200 300 400 500 diF/dt(A/μs) Figure 4. Reverse Recovery Charge vs diF/dt 10 1 ZthJC (K/W) IF(A) 4 Per Diode 0 25 50 75 100 125 150 175 TC(℃) Figure 5.Forward current vs.Case temperature 0.1 Per Diode 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure 6. Transient Thermal Impedance Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/3 http://www.thinkisemi.com/ FML32S ® Figure 7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 3/3 http://www.thinkisemi.com/ .


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