Document
FML32S
®
FML32S
Pb Free Plating Product
Pb
20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine
APPLICATION
· Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS
PRODUCT FEATURE
· Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current
TO-3PF/TO-3PML
Internal Configuration Base Backside
—
Anode Cathode Anode
GENERAL DESCRIPTION
FML32S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine.
ABSOLUTE MAXIMUM RATINGS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
VR VRRM
IF(AV)
IF(RMS) IFSM PD TJ TSTG Torque
Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink
TC=110°C, Per Diode TC=110°C, Per Package TC=110°C, Per Diode TJ=45°C,t=10ms, 50Hz, Sine
Recommended(M3)
210
10 20 14 100 83 -55 to +150 -55 to +150 1.1
Rth(J-C) Weight
Junction-to-Case Thermal Resistance, Per Diode
1.5 5.2
Unit
V
A
W °C °C N•m °C /W g
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IRM Maximum Reverse Leakage Current
VR =220V VR =220V, TJ = 125°C
10 μA 10 mA
VF Forward Voltage
IF=10A IF=10A,TJ=125°C
trr Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V)
0.9 1.1 V 0.8 0.95 17 ns
trr Reverse Recovery Time
IF =10A,VR =100V,
32 ns
IRRM Maximum Reverse Recovery Current
diF/dt = -200A/μs
2.1 A
trr Reverse Recovery Time
IF = 10A,VR =100V,
45 ns
IRRM Maximum Reverse Recovery Current
diF/dt = -200A/μs ,TJ=125°C
5
A
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3 http://www.thinkisemi.com/
FML32S
®
IRRM(A)
IF(A)
30 25 25°C
125°C 20
15
10
5 Per Diode 0 0.3 0.6 0.9 1.2 1.5
VF(V)
Figure 1. Forward Voltage Drop vs Forward Current
15 25°C
12 125°C 9
6
3 Per Diode
0 100 200 300 400 500
diF/dt(A/μs)
Figure 3. Reverse Recovery Current vs diF/dt
12
DC
8
QRRM(nc)
trr (ns)
80
25°C 60 125°C
40
20
0 100
Per Diode
200 300 400
diF/dt(A/μs)
500
Figure 2. Reverse Recovery Time vs diF/dt
250
200 25°C 125°C
150
100
50 Per Diode
0 100 200 300 400 500
diF/dt(A/μs)
Figure 4. Reverse Recovery Charge vs diF/dt
10
1
ZthJC (K/W)
IF(A)
4 Per Diode
0 25 50 75 100 125 150 175
TC(℃)
Figure 5.Forward current vs.Case temperature
0.1 Per Diode
0.01 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (seconds)
Figure 6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/3 http://www.thinkisemi.com/
FML32S
®
Figure 7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/3 http://www.thinkisemi.com/
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