IRF3205 MOSFET Transistor Datasheet

IRF3205 Datasheet, PDF, Equivalent


Part Number

IRF3205

Description

N-Channel Trench Process Power MOSFET Transistor

Manufacture

Thinki Semiconductor

Total Page 5 Pages
Datasheet
Download IRF3205 Datasheet


IRF3205
IRF3205
®
Pb Free Plating Product
IRF3205
Pb
N-Channel Trench Process Power MOSFET Transistor
General Description
The IRF3205 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching .
Features
VDS=55V; ID=105A@ VGS=10V;
RDS(ON)<6.0mΩ @ VGS=10V
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
G DS
TO-220CB Top View
Schematic Diagram
VDS = 55 V
ID = 105 A
RDS(ON) = 5.0 m
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=40V,VBGB=10V,RG=25Ω
Value
55
±25
105
100
420
30
139
0.926
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Rev.05
© 2013 Thinki Semiconductor Co.,Ltd.
Page 1/5
http://www.thinkisemi.com/

IRF3205
IRF3205
®
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
1.08
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Unit
On/Off States
BVDSS
IDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=55V,VGS=0V
VDS=55V,VGS=0V
55
V
1 μA
1 μA
IGSS Gate-Body Leakage Current
VGS(th) Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
Dynamic Characteristics
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=25V,ID=40A
VDS=25V,VGS=0V,
f=1.0MHz
VDS=30V,ID=30A,
VGS=10V
±100 nA
2 4V
5.0 6.0 mΩ
25
5905
905
548
94
18
25
S
PF
PF
PF
nC
nC
nC
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source-Drain Diode Characteristics
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
15 nS
18 nS
31 nS
38 nS
ISD Source-drain Current(Body Diode)
105 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=40A,VGS=0V
TJ=25,IF=75A
di/dt=100A/μs
420
0.87 0.95
56
113
A
V
nS
nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25
Rev.05
© 2013 Thinki Semiconductor Co.,Ltd.
Page 2/5
http://www.thinkisemi.com/


Features IRF3205 ® Pb Free Plating Product IR F3205 Pb N-Channel Trench Process Pow er MOSFET Transistor General Descripti on The IRF3205 is N-channel MOS Field E ffect Transistor designed for high curr ent switching applications. Rugged EAS capability and ultra low RDS(ON) is sui table for PWM, load switching . Feature s ● VDS=55V; ID=105A@ VGS=10V; RDS(ON )<6.0mΩ @ VGS=10V ● Ultra Low On-Res istance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagr am VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1. Absolute Maximum Rating s (TA=25℃) Symbol Parameter VDS Dr ain-Source Voltage (VGS=0V) VGS Gate-S ource Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc= 25℃ Drain Current (DC) at Tc=100℃ D rain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery V oltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse Avalan.
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