IRF3205

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=40V,VBGB=10V,RG=25Ω Value 55 ±25 105 100 420 30 139 0.926 625 -55 To 175 Unit V V A A A V/ns W W/℃ mJ ℃ Rev.05 © 2013 Thinki Semiconductor Co.,Ltd. Page 1/5 http://www.thinkisemi.com/ IRF3205 ® Table 2. Thermal Characteristic Symbol Parameter RJC Thermal Resistance,Junction-to-Case Value 1.08 Unit ℃/...