IRF630PBF
®
IRF630PBF
Pb Free Plating Product
Pb
9A,200V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (M...
IRF630PBF
®
IRF630PBF
Pb Free Plating Product
Pb
9A,200V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested
1.Gate
2.Drain 3.Source
BVDSS = 200V RDS(ON) = 0.4 ohm ID = 9A
General Description
This N-channel enhancement mode field-effect power
transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RTJC RTCS RTJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min. -
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 200 9 5.8 36
±30
180 7.8 5.5 78 0.62 - 55 ~ 150
300
Value Typ.
0.5
-
Max...