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IRF830PBF Dataheets PDF



Part Number IRF830PBF
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description N-Channel Type Power MOSFET
Datasheet IRF830PBF DatasheetIRF830PBF Datasheet (PDF)

IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line.

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IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1. Gate { { 2. Drain ̻ ඔ̵ ̻ ̻ { 3. Source BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application. TO-220C 23 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RTJC RTCS RTJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min. - (Note 1) (Note 2) (Note 1) (Note 3) Value 500 5.0 3.4 21.2 ±30 390 9.84 4.5 98.4 0.78 - 55 ~ 150 300 Value Typ. 0.5 - Max. 1.27 62 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/6 http://www.thinkisemi.com/ IRF830PBF ® Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage ȟ BVDSS/ Breakdown Voltage Temperature ȟ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics Test Conditions VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 500V, VGS = 0V VDS = 400V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-state Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Dynamic Characteristics VDS = VGS, ID = 250uA VGS =10 V, ID = 2.65A VGS =0 V, VDS =25V, f = 1MHz td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDD =250V, ID =5.0A, RG =25 ˟ ଖ see fig. 13. (Note 4, 5) VDS =400V, VGS =10V, ID =5.3A ଖ see fig. 12. (Note 4, 5) Min 500 - - 2.0 - - - Typ Max Units --V 0.47 - V/°C - 1 uA - 10 uA - 100 nA - -100 nA - 4.0 1.2 1.5 V ˟ 608 75 25 - pF 16 42 49 108 60 130 49 108 18.5 23 4- 8- ns nC Source-Drain Diode Ratings and Characteristics Symbol Paramet.


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