Document
IRF830PBF
®
Pb Free Plating Product
IRF830PBF
Pb
5.0A,500V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested
1. Gate {
{ 2. Drain
̻
ඔ̵
̻ ̻
{ 3. Source
BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C
23 1
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RTJC RTCS RTJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min.
-
(Note 1)
(Note 2) (Note 1) (Note 3)
Value
500 5.0 3.4 21.2
±30
390 9.84 4.5 98.4 0.78 - 55 ~ 150
300
Value Typ.
0.5
-
Max.
1.27 62
Units
V A A A V mJ mJ V/ns W W/°C °C °C
Units
°C/W °C/W °C/W
Rev.05 © 2006 Thinki Semiconductor Co., Ltd.
Page 1/6 http://www.thinkisemi.com/
IRF830PBF
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ȟ BVDSS/ Breakdown Voltage Temperature ȟ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward Gate-source Leakage, Reverse
On Characteristics
Test Conditions
VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 500V, VGS = 0V VDS = 400V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance Crss Reverse Transfer Capacitance
Dynamic Characteristics
VDS = VGS, ID = 250uA VGS =10 V, ID = 2.65A
VGS =0 V, VDS =25V, f = 1MHz
td(on) tr
td(off) tf Qg
Qgs
Qgd
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge
Gate-Drain Charge(Miller Charge)
VDD =250V, ID =5.0A, RG =25 ˟
ଖ see fig. 13.
(Note 4, 5)
VDS =400V, VGS =10V, ID =5.3A
ଖ see fig. 12.
(Note 4, 5)
Min
500
-
-
2.0 -
-
-
Typ Max Units
--V
0.47 - V/°C
- 1 uA
- 10 uA
- 100 nA
-
-100
nA
- 4.0 1.2 1.5
V ˟
608 75 25 -
pF
16 42 49 108 60 130 49 108 18.5 23 4-
8-
ns nC
Source-Drain Diode Ratings and Characteristics
Symbol
Paramet.