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IRF820
N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor IRF820 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High cu...
Inchange Semiconductor
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