IRFAC30

isc N-Channel Mosfet Transistor IRFAC30 ·FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.6 A IDM Drain Current-Single Plused 14 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=0.25mA VSD Diode Forward On-voltage IS= 3.6A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.6A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=480V; VGS= 0 Gfs Forward Trans...