Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFAC42R
DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·Ease of Paralleling
APPLICATIONS ·Designed for applications such as switching power
Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
600 ±20
V V
Drain Current-continuous@ TC=25℃ 5.4 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRFAC42R
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.4A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD Diode Forward Voltage
IF= 6.2A; VGS= 0
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS=250V,VGS=10V, F=1.0MHz
MIN TYP MAX UNIT
600 V
2 4V
1.6 Ω
±100
nA
250 uA
1.5 V
1300
pF
160 pF
30 pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time Td(off) Turn-off Delay Time
VDD=300V,ID=6.2A RG=9.1Ω
Tf Fall Time
MIN TYP MAX UNIT 13 20 ns 18 27 ns 55 83 ns 20 30 ns
isc website:www.iscsemi.cn
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