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IRFAC42R Dataheets PDF



Part Number IRFAC42R
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet IRFAC42R DatasheetIRFAC42R Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFAC42R DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·Ease of Paralleling APPLICATIONS ·Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFAC42R DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·Ease of Paralleling APPLICATIONS ·Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 600 ±20 V V Drain Current-continuous@ TC=25℃ 5.4 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRFAC42R ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.4A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VSD Diode Forward Voltage IF= 6.2A; VGS= 0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=250V,VGS=10V, F=1.0MHz MIN TYP MAX UNIT 600 V 2 4V 1.6 Ω ±100 nA 250 uA 1.5 V 1300 pF 160 pF 30 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=300V,ID=6.2A RG=9.1Ω Tf Fall Time MIN TYP MAX UNIT 13 20 ns 18 27 ns 55 83 ns 20 30 ns isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


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