IRFP150R

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP150R FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 180 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP150R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID= 22A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0 VSD Forward On-Voltage IS= 40A; VGS= 0 MIN MAX UNIT 100 V 24V 0.055 Ω ±100 ...