IRFP460PBF
®
IRFP460PBF
Pb Free Plating Product
Pb
20A,500V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on)...
IRFP460PBF
®
IRFP460PBF
Pb Free Plating Product
Pb
20A,500V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on) (Max 0.24 Ω )@VGS=10V ■ Gate Charge (Typical 130nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested
1. Gate {
{ 2. Drain
●
◀▲
● ●
{ 3. Source
BVDSS = 500V RDS(ON) = 0.24 ohm ID = 20A
General Description
This N-channel enhancement mode field-effect power
transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3PB pkg is well suited for adaptor power unit and small power inverter application.
TO-3PB
3 2 1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Value 500 20 12.5 8...
