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54F413 Dataheets PDF



Part Number 54F413
Manufacturers National Semiconductor
Logo National Semiconductor
Description 64 x 4 First-In First-Out Buffer Memory
Datasheet 54F413 Datasheet54F413 Datasheet (PDF)

Obsolete 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O January 1995 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O General Description The ’F413 is an expandable fall-through type high-speed First-In First-Out (FIFO) buffer memory organized as 64 words by four bits The 4-bit input and output registers record and transmit respectively asynchronous data in parallel form Control pins on the input and output allow for handshaking and expansion The 4-b.

  54F413   54F413



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Obsolete 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O January 1995 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O General Description The ’F413 is an expandable fall-through type high-speed First-In First-Out (FIFO) buffer memory organized as 64 words by four bits The 4-bit input and output registers record and transmit respectively asynchronous data in parallel form Control pins on the input and output allow for handshaking and expansion The 4-bit wide 62-bit deep fallthrough stack has self-contained control logic Features Y Separate input and output clocks Y Parallel input and output Y Expandable without external logic Y 15 MHz data rate Y Supply current 160 mA max Y Available in SOIC (300 mil only) Commercial 74F413PC Military 54F413DM (Note 1) Package Number N16E J16A Package Description 16-Lead (0 300 Wide) Molded Dual-In-Line 16-Lead Ceramic Dual-In-Line Note 1 Military grade device with environmental and burn-in processing Use suffix e DMQB Logic Symbol Connection Diagram Pin Assignment for DIP TL F 9541 – 1 TL F 9541 – 2 TRI-STATE is a registered trademark of National Semiconductor Corporation C1995 National Semiconductor Corporation TL F 9541 RRD-B30M105 Printed in U S A Unit Loading Fan Out Pin Names D0 – D3 O0 – O3 IR SI SO OR MR Description Data Inputs Data Outputs Input Ready Shift In Shift Out Output Ready Master Reset 54F 74F UL HIGH LOW 1 0 0 667 50 13 3 1 0 0 667 1 0 0 667 1 0 0 667 1 0 0 667 1 0 0 667 Input IIH IIL Output IOH IOL 20 mA b0 4 mA b1 mA 8 mA 20 mA b0 4 mA 20 mA b0 4 mA 20 mA b0 4 mA 20 mA b0 4 mA 20 mA b0 4 mA Functional Description Data Input Data is entered into the FIFO on D0 – D3 inputs To enter data the Input Ready (IR) should be HIGH indicating that the first location is ready to accept data Data then present at the four data inputs is entered into the first location when the Shift In (SI) is brought HIGH An SI HIGH signal causes the IR to go LOW Data remains at the first location until SI is brought LOW When SI is brought LOW and the FIFO is not full IR will go HIGH indicating that more room is available Simultaneously data will propagate to the second location and continue shifting until it reaches the output stage or a full location If the memory is full IR will remain LOW Data Transfer Once data is entered into the second cell the transfer of any full cell to the adjacent (downstream) empty cell is automatic activated by an on-chip control Thus data will stack up at the end of the device while empty locations will ‘‘bubble’’ to the front The tPT parameter defines the time required for the first data to travel from input to the output of a previously empty device Block Diagram Data Output Data is read from the O0 – O3 outputs When data is shifted to the output stage Output Ready (OR) goes HIGH indicating the presence of valid data When the OR is HIGH data may be shifted out by bringing the Shift Out (SO) HIGH A HIGH signal at SO causes t.


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