Document
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =0.6Ω ·8A and 150V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF633
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
150 ±20
V V
ID Drain Current-Continuous
8A
IDM Drain Current-Single Plused
32 A
PD Total Dissipation @TC=25℃
75 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
1.67 80
℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF633
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID= 5A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 150V; VGS=0
VSD Forward On-Voltage
IS= 9A; VGS=0
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V, F=1.0MHz
MIN TYP
MAX UNIT
150 V
2 4V 0.6 Ω
±500 nA
250 uA
2.0 V
600 pF
250 pF
80 pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time Td(off) Turn-off Delay Time
VDD=90V,ID=9.0A RG=9.1Ω
Tf Fall Time
MIN TYP MAX UNIT 30 ns 50 ns 50 ns 40 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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