Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF636
DESCRIPTION ·Drain Current –ID=8.1A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 275V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max) ·Nanosecond Switching Speed ·High Input Impedance
APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
275 ±20
V V
Drain Current-continuous@ TC=25℃ 8.1 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
1.67 80
℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF636
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4.1A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 275V; VGS= 0
VSD Diode Forward Voltage
IF= 8.1A; VGS= 0
MIN MAX UNIT 275 V
24V 0.45 Ω ±500 nA 250 uA 2.0 V
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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.