INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF647
·FEATURES ·Avalanche Rugged Te...
INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
IRF647
·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
275 ±20
V V
ID Drain Current-Continuous
13 A
IDM Drain Current-Single Plused
52 A
PD Total Dissipation @TC=25℃
125 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c RθJA
Thermal Resistance,Junction to Case Junction-to-Ambient
MAX UNIT 1.0 ℃/W 80 ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
IRF647
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID= 8A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 275V; V...