INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF650A
FEATURES ·Low RDS(on) = 0.073...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF650A
FEATURES ·Low RDS(on) = 0.073Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
200 ±30
V V
28 A
112 A
156 W
-55~150 -55~150
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 0.8 62.5
UNIT ℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF650A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=14A
VGS= ±30V;VDS= 0 VDS= 200V; VGS= 0 VDS= 160V; VGS= 0; Tj= 125℃ IS= 28A; VGS= 0
Ciss Input Capacitance Coss Output...