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IRFP257

N-Channel MOSFET Transistor

Description

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and...

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