|
|
MOSFET Transistor. IRFP360 Datasheet |
|
|
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP360
FEATURES
·Drain Current –ID= 23A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
400
±20
V
V
ID Drain Current-Continuous
23 A
IDM Drain Current-Single Pluse
92 A
PD Total Dissipation @TC=25℃
250 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.50
30
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
|
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP360
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 13A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD Forward On-Voltage
IS= 23A; VGS= 0
MIN MAX UNIT
400 V
24V
0.2 Ω
±100
nA
250 μA
1.8 V
·
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |