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IRFP360 Dataheets PDF



Part Number IRFP360
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFP360 DatasheetIRFP360 Datasheet (PDF)

www.vishay.com IRFP360 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 400 VGS = 10 V 0.20 Qg (max.) (nC) 210 Qgs (nC) 30 Qgd (nC) 110 Configuration Single FEATURES • Dynamic dV/dt rated • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/.

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www.vishay.com IRFP360 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 400 VGS = 10 V 0.20 Qg (max.) (nC) 210 Qgs (nC) 30 Qgd (nC) 110 Configuration Single FEATURES • Dynamic dV/dt rated • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFP360PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain currenta Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) for 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 4.0 mH, Rg = 25 Ω, IAS = 23 A (see fig. 12) c. ISD ≤ 23 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case LIMIT 400 ± 20 23 14 92 2.2 1200 23 28 280 4.0 -55 to +150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m S22-0045-Rev. C, 24-Jan-2022 1 Document Number: 90292 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.24 - IRFP360 Vishay Siliconix MAX. 40 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source br.


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