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IRFP360
Vishay Siliconix
Power MOSFET
D TO-247AC
S
D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
400 VGS = 10 V
0.20
Qg (max.) (nC)
210
Qgs (nC)
30
Qgd (nC)
110
Configuration
Single
FEATURES • Dynamic dV/dt rated
• Repetitive avalanche rated
Available
• Isolated central mounting hole • Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package Lead (Pb)-free
TO-247AC IRFP360PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain currenta Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
for 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 4.0 mH, Rg = 25 Ω, IAS = 23 A (see fig. 12) c. ISD ≤ 23 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 400 ± 20 23 14 92 2.2 1200 23 28 280 4.0
-55 to +150 300d 10 1.1
UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
S22-0045-Rev. C, 24-Jan-2022
1
Document Number: 90292
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)
RthJA RthCS RthJC
TYP. -
0.24 -
IRFP360
Vishay Siliconix
MAX. 40 0.45
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source br.