N-Channel MOSFET. IRFP360 Datasheet

IRFP360 MOSFET. Datasheet pdf. Equivalent


IXYS IRFP360
MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 360
VDSS = 400 V
ID25 = 23 A
RDS(on) = 0.20
Preliminary data
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1.0
M
Continuous
Transient
TC = 25°C
TC = 100°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt
T
J
150°C,
R
G
=
2
TC = 25°C
Mounting torque
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
400 V
400 V
±20 V
±30 V
23 A
14 A
92 A
23 A
30 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
1.13/10
6
300
W
°C
°C
°C
Nm/lb.in.
g
°C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
400
2
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 14A
Pulse test, t 300 µs, duty cycle d 2%
V
4V
±100 nA
25 µA
250 µA
0.20
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Fast switching times
International standard packages
Low R HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
High commuting dv/dt rating
Applications
DC choppers
Motor Controls
Switch-mode and resonant-mode
Uninterruptable power supplies (UPS)
Advantages
Space savings
High power density
Easy to mount with 1 screw (isolated
mounting screw hole)
This data reflects the objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95509A (4/95)
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IRFP360 Datasheet
Recommendation IRFP360 Datasheet
Part IRFP360
Description N-Channel MOSFET
Feature IRFP360; MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Prelim.
Manufacture IXYS
Datasheet
Download IRFP360 Datasheet




IXYS IRFP360
IRFP 360
Symbol
gfs
C
iss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Qgs
Q
gd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 14 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4.3 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
14 S
4500
1100
490
pF
pF
pF
24 ns
33 ns
100 ns
30 ns
210 nC
30 nC
110 nC
0.45 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Ratings and Characteristics
(T = 25°C unless otherwise specified)
J
Min. Typ.
Max.
IS VGS= 0
ISM Repetitive; pulse width limited by TJM
V I = I , V = 0 V,
SD F S GS
Pulse test, t 300 µs, duty cycle d 2 %
23 A
92 A
1.8 V
trr IF = IS, -di/dt = 100 A/µs
Qrr
420 630
5.6 8.4
ns
µC
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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