MOSFET Transistor. IRFP362 Datasheet

IRFP362 Transistor. Datasheet pdf. Equivalent


Inchange Semiconductor IRFP362
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP362
FEATURES
·Drain Current ID= 20A@ TC=25
·Drain Source Voltage-
: VDSS= 400V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
400
±20
V
V
ID Drain Current-Continuous
20 A
IDM Drain Current-Single Pluse
80 A
PD Total Dissipation @TC=25
250 W
TJ
Max. Operating Junction Temperature
-55~150
Tstg Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.50
30
UNIT
/W
/W
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IRFP362 Datasheet
Recommendation IRFP362 Datasheet
Part IRFP362
Description N-Channel MOSFET Transistor
Feature IRFP362; INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP362 FEATURES .
Manufacture Inchange Semiconductor
Datasheet
Download IRFP362 Datasheet




Inchange Semiconductor IRFP362
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP362
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 13A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD Forward On-Voltage
IS= 23A; VGS= 0
MIN MAX UNIT
400 V
24V
0.25 Ω
±100
nA
250 μA
1.8 V
·
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