MOSFET Transistor. IRFP450 Datasheet

IRFP450 Transistor. Datasheet pdf. Equivalent

Part IRFP450
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP450 FEATURES .
Manufacture Inchange Semiconductor
Datasheet
Download IRFP450 Datasheet

IRFP450 Datasheet
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IRFP450
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP450
FEATURES
·Drain Current ID= 14A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
±20
V
V
ID Drain Current-Continuous
14 A
IDM Drain Current-Single Pluse
56 A
PD Total Dissipation @TC=25
180 W
TJ
Max. Operating Junction Temperature
-55~150
Tstg Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7 /W
Rth j-a Thermal Resistance, Junction to Ambient 30 /W
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IRFP450
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP450
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 7.9A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD Forward On-Voltage
IS= 14A; VGS= 0
MIN MAX UNIT
500 V
24V
0.4 Ω
±100
nA
250 μA
1.4 V
·
isc websitewww.iscsemi.cn
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