isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP460
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source ...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRFP460
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.27Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Pluse
80
A
PD
Total Dissipation @TC=25℃
280
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
isc website:www.iscsemi.com
MAX UNIT
0.45 ℃/W
40
℃/W
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRFP460
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 12A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 500V; VGS= 0 VDS= 400V; VGS= 0; Tj= 150℃
IS= 20A; VGS= 0
MIN MAX U...