IRFP462

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP462 FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX UNIT 0.5 ℃/W 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP462 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VDS= VGS; ID= 0.25mA VGS= 10V; ID= 11A VGS= ±20V;VDS= 0 VDS= 500V; VGS= 0 VDS= 400V; VGS= 0; Tj= 150℃ IS= 21A; VGS= 0 MIN MAX UNIT 500 V 24V 0....