Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFPC40R
FEATURES ·Drain Current –ID= 6.8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
600 ±20
V V
ID Drain Current-Continuous
6.8 A
IDM Drain Current-Single Pluse
27 A
PD Total Dissipation @TC=25℃
150 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 0.83 30
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFPC40R
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 3.7A
VGS= ±20V;VDS= 0 VDS= 600V; VGS= 0 VDS= 480V; VGS= 0; Tj= 150℃ IS= 6.2A; VGS= 0
MIN MAX UNIT
600 V
24V
1.2 Ω
±500
nA
250 1000
μA
1.5 V
·
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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.