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Power MOSFET. IRFPC40 Datasheet

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Power MOSFET. IRFPC40 Datasheet






IRFPC40 MOSFET. Datasheet pdf. Equivalent






IRFPC40 MOSFET. Datasheet pdf. Equivalent


IRFPC40

Part

IRFPC40

Description

Power MOSFET



Feature


Power MOSFET IRFPC40, SiHFPC40 Vishay S iliconix PRODUCT SUMMARY VDS (V) RDS( on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (n C) Configuration 600 VGS = 10 V 60 8.3 30 Single 1.2 TO-247 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mo unting Hole • Fast Switch.
Manufacture

Vishay

Datasheet
Download IRFPC40 Datasheet


Vishay IRFPC40

IRFPC40; ing • Ease of Paralleling • Simple D rive Requirements • Lead (Pb)-free Av ailable Available RoHS* COMPLIANT DES CRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resis tance and cost-effectiveness. The TO-24 7 package is preferred for commercial-i ndustrial applications w.


Vishay IRFPC40

here higher power levels preclude the us e of TO-220 devices. The TO-247 is simi lar but superior to the earlier TO-218 package because of its isolated mountin g hole. It also provides greater creepa ge distance between pins to meet the re quirements of most safety specification s. TO-247 IRFPC40PbF SiHFPC40-E3 IRFPC 40 SiHFPC40 ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless .

Part

IRFPC40

Description

Power MOSFET



Feature


Power MOSFET IRFPC40, SiHFPC40 Vishay S iliconix PRODUCT SUMMARY VDS (V) RDS( on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (n C) Configuration 600 VGS = 10 V 60 8.3 30 Single 1.2 TO-247 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mo unting Hole • Fast Switch.
Manufacture

Vishay

Datasheet
Download IRFPC40 Datasheet




 IRFPC40
Power MOSFET
IRFPC40, SiHFPC40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
60
8.3
30
Single
1.2
TO-247
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
TO-247
IRFPC40PbF
SiHFPC40-E3
IRFPC40
SiHFPC40
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 12).
c. ISD 6.8 A, dI/dt 80 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91240
S-Pending-Rev. A, 26-Jun-08
WORK-IN-PROGRESS
LIMIT
600
± 20
6.8
4.3
27
1.2
410
150
3.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1




 IRFPC40
IRFPC40, SiHFPC40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.83
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.1 Ab
VDS = 100 V, ID = 4.1 Ab
600 -
-V
- 0.70 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100
µA
- - 500
- - 1.2 Ω
4.9 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 6.2 A, VDS = 360 V,
see fig. 6 and 13b
VDD = 300 V, ID = 6.2 A ,
RG = 9.1 Ω, RD = 47 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
1300
160
30
-
-
-
13
18
55
20
-
-
-
60
8.3
30
-
-
-
-
pF
nC
ns
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 5.0 -
nH
- 13 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 6.8
A
- - 27
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.8 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
-
450 940 ns
Qrr - 3.8 7.9 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91240
S-Pending-Rev. A, 26-Jun-08



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