INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS820A
FEATURES ·Avalanche Rugged T...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFS820A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
500 V
±30
V
2.1 A
8A
33 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 3.74 62.5
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFS820A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 1.05A
VGS= ±20V;VDS= 0 VDS= 500V; VGS= 0 VDS= 400V; VGS= 0; Tj= 125℃ IS= 2.1A; VGS= 0
MIN MAX UNIT
500 V
24V
3Ω
...