IRFZ40 IRFZ40FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRFZ40 IRFZ40FI
VDSS
50 V 50 V
R DS( on)
< 0....
IRFZ40 IRFZ40FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE
IRFZ40 IRFZ40FI
VDSS
50 V 50 V
R DS( on)
< 0.028 Ω < 0.028 Ω
ID
50 A 27 A
s TYPICAL RDS(on) = 0.022 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3 2 1
3 2 1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage
ID Drain Current (cont.) at Tc = 25 oC ID Drain Current (cont.) at Tc = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1993
Value
IRFZ40
IRFZ40FI
50 50
50 50
± 20
50 27
35 19
200 200
150 45
1 0.3
2000
-65 to 175
175
Unit
V V V A A A W W/oC V oC oC
1/9
IRFZ40/FI
THERMAL DATA
Rthj-case
Rthj- amb R th c-s
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220 1
ISOWATT220
3. 33
6 2. 5 ...