INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5024
DESCRIPTION ·Collector-Emitt...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KSC5024
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for switching
regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3A 90 W 150 ℃ -55~150 ℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KSC5024
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEX(SUS) Collector-Emitter Sustaining Voltage
V(BR)CBO Collector-Base Breakdown Voltage
CONDITIONS
IC= 3.5A ;IB1= -IB2= 1.4A; L= 500μH,Clamped
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO Collector Cutoff Current
VCB= 500V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
COB Output Ca...