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KSC5028 Dataheets PDF



Part Number KSC5028
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet KSC5028 DatasheetKSC5028 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5028 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3 A ICM.

  KSC5028   KSC5028



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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5028 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 80 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5028 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA; RBE=∞ VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1=-IB2=0.3A L=2mH, Clamped V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 800 1100 V V V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC=0.2A ; VCE= 5V 10 40 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 60 pF fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 15 MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A , IB1= 0.4A; IB2= -0.8A RL= 200Ω; VCC= 400V 0.5 μs 3.0 μs 0.3 μs  hFE-1 Classifications NRO 10-20 15-30 20-40 isc website:www.iscsemi.cn 2 .


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