Document
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5028
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability
APPLICATIONS ·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 3 A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
80 W
150 ℃
-55~150
℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5028
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA; RBE=∞
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC= 1.5A; IB1=-IB2=0.3A L=2mH, Clamped
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
800 800 1100
V V V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5 V
ICBO Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC=0.2A ; VCE= 5V
10 40
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
8
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz 60 pF
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V
15 MHz
Switching times
ton Turn-on Time tstg Storage Time tf Fall Time
IC= 2A , IB1= 0.4A; IB2= -0.8A RL= 200Ω; VCC= 400V
0.5 μs 3.0 μs 0.3 μs
hFE-1 Classifications NRO
10-20 15-30 20-40
isc website:www.iscsemi.cn
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