Power Transistor. KSD1408 Datasheet

KSD1408 Transistor. Datasheet pdf. Equivalent

Part KSD1408
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD1408 DESCRIPT.
Manufacture Inchange Semiconductor
Datasheet
Download KSD1408 Datasheet




KSD1408
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD1408
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@IC= 3A
·Good Linearity of hFE
·Complement to Type KSB1017
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 20~25W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
4A
IB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
0.4 A
2
W
25
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
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KSD1408
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD1408
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
IC= 3A; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
80 V
1.5 V
1.5 V
30 μA
0.1 mA
40 240
15
90 pF
8 MHz
‹ hFE-1 Classifications
ROY
40-80 70-140 120-240
isc websitewww.iscsemi.cn
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