KSD1691

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type KSB1151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V 60 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7 V 5 A ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 1 A 20 W 1.3 150 ℃ -55~150 ℃ KSD1691 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.2A VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 1V hFE-2 DC Current Gain IC= 2A; VCE= 1V hFE-3 DC Current Gain IC= 5A; VCE= 1V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A, IB1= -IB2= 0.2A; RL= 5Ω; VCC= 10V  hFE-2 Classificati...