KSD5010

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5010 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5010 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 2.5A IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA 40 130 mA 8 3 MHz 2.0 V 0.4 μs isc website：www.iscsemi.cn 2 ...